| PART |
Description |
Maker |
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| KTS1C1S250 |
Typical RDS(on) (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode
|
TY Semiconductor Co., Ltd
|
| SM08472350 |
Electrical Specifications: Mechanical Specifications:
|
AMETHERM Circuit Protection Thermistors
|
| SM08332350 |
Electrical Specifications: Mechanical Specifications:
|
AMETHERM Circuit Protection Thermistors
|
| SM08103410 |
Electrical Specifications: Mechanical Specifications:
|
AMETHERM Circuit Protection Thermistors
|
| SM08223410 |
Electrical Specifications: Mechanical Specifications:
|
AMETHERM Circuit Protection Thermistors
|
| SM06683370 |
Electrical Specifications: Mechanical Specifications:
|
AMETHERM Circuit Protection Thermistors
|
| SM06503410 |
Electrical Specifications: Mechanical Specifications:
|
AMETHERM Circuit Protection Thermistors
|
| SM06104410 |
Electrical Specifications: Mechanical Specifications:
|
AMETHERM Circuit Protection Thermistors
|
